IPB073N15N5ATMA1
detaildesc

IPB073N15N5ATMA1

Infineon Technologies

Product No:

IPB073N15N5ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Datasheet:

-

Description:

MOSFET N-CH 150V 114A TO263-3

Quantity:

Delivery:

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Payment:

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In Stock : 6600

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.073329

    $3.073329

  • 10

    $2.765996

    $27.65996

  • 50

    $2.458663

    $122.93315

  • 100

    $2.15133

    $215.133

  • 500

    $2.089864

    $1044.932

  • 1000

    $2.048886

    $2048.886

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4700 pF @ 75 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 7.3mOhm @ 57A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.6V @ 160µA
Supplier Device Package PG-TO263-3-2
Drain to Source Voltage (Vdss) 150 V
Power Dissipation (Max) 214W (Tc)
Series OptiMOS™-5
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 114A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Package Tape & Reel (TR)
Base Product Number IPB073