IPB083N10N3GATMA1
detaildesc

IPB083N10N3GATMA1

Infineon Technologies

Product No:

IPB083N10N3GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Datasheet:

-

Description:

MOSFET N-CH 100V 80A D2PAK

Quantity:

Delivery:

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Payment:

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In Stock : 3755

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.18755

    $1.18755

  • 10

    $1.068795

    $10.68795

  • 50

    $0.95004

    $47.502

  • 100

    $0.831285

    $83.1285

  • 500

    $0.807534

    $403.767

  • 1000

    $0.7917

    $791.7

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3980 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 8.3mOhm @ 73A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 75µA
Supplier Device Package PG-TO263-3
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 125W (Tc)
Series OptiMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number IPB083