Infineon Technologies
Product No:
IPB083N10N3GATMA1
Manufacturer:
Package:
PG-TO263-3
Datasheet:
-
Description:
MOSFET N-CH 100V 80A D2PAK
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.18755
$1.18755
10
$1.068795
$10.68795
50
$0.95004
$47.502
100
$0.831285
$83.1285
500
$0.807534
$403.767
1000
$0.7917
$791.7
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Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 3980 pF @ 50 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 8.3mOhm @ 73A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 3.5V @ 75µA |
Supplier Device Package | PG-TO263-3 |
Drain to Source Voltage (Vdss) | 100 V |
Power Dissipation (Max) | 125W (Tc) |
Series | OptiMOS™ |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPB083 |