Infineon Technologies
Product No:
IPB100N12S305ATMA1
Manufacturer:
Package:
PG-TO263-3-1
Datasheet:
-
Description:
MOSFET N-CH 120V 100A TO263-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$3.53115
$3.53115
10
$3.178035
$31.78035
50
$2.82492
$141.246
100
$2.471805
$247.1805
500
$2.401182
$1200.591
1000
$2.3541
$2354.1
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Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 11570 pF @ 25 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 185 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 5.1mOhm @ 100A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4V @ 240µA |
Supplier Device Package | PG-TO263-3-1 |
Drain to Source Voltage (Vdss) | 120 V |
Power Dissipation (Max) | 300W (Tc) |
Series | OptiMOS™ |
Package / Case | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPB100 |