IPB107N20NAATMA1
detaildesc

IPB107N20NAATMA1

Infineon Technologies

Product No:

IPB107N20NAATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Datasheet:

-

Description:

MOSFET N-CH 200V 88A D2PAK

Quantity:

Delivery:

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Payment:

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In Stock : 1433

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $7.140577

    $7.140577

  • 10

    $6.42652

    $64.2652

  • 50

    $5.712462

    $285.6231

  • 100

    $4.998404

    $499.8404

  • 500

    $4.855593

    $2427.7965

  • 1000

    $4.760385

    $4760.385

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 7100 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 87 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 10.7mOhm @ 88A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 270µA
Supplier Device Package PG-TO263-3
Drain to Source Voltage (Vdss) 200 V
Power Dissipation (Max) 300W (Tc)
Series OptiMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 88A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPB107