Infineon Technologies
Product No:
IPB107N20NAATMA1
Manufacturer:
Package:
PG-TO263-3
Datasheet:
-
Description:
MOSFET N-CH 200V 88A D2PAK
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$7.140577
$7.140577
10
$6.42652
$64.2652
50
$5.712462
$285.6231
100
$4.998404
$499.8404
500
$4.855593
$2427.7965
1000
$4.760385
$4760.385
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Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 7100 pF @ 100 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 10.7mOhm @ 88A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4V @ 270µA |
Supplier Device Package | PG-TO263-3 |
Drain to Source Voltage (Vdss) | 200 V |
Power Dissipation (Max) | 300W (Tc) |
Series | OptiMOS™ |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 88A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPB107 |