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IPB110N20N3LFATMA1
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IPB110N20N3LFATMA1

Infineon Technologies

Product No:

IPB110N20N3LFATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Datasheet:

-

Description:

MOSFET N-CH 200V 88A TO263-3

Quantity:

Delivery:

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Payment:

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In Stock : 2055

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $5.800326

    $5.800326

  • 10

    $5.220293

    $52.20293

  • 50

    $4.640261

    $232.01305

  • 100

    $4.060228

    $406.0228

  • 500

    $3.944222

    $1972.111

  • 1000

    $3.866884

    $3866.884

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 76 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 11mOhm @ 88A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.2V @ 260µA
Supplier Device Package PG-TO263-3
Drain to Source Voltage (Vdss) 200 V
Power Dissipation (Max) 250W (Tc)
Series OptiMOS™ 3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 88A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPB110