Infineon Technologies
Product No:
IPB110N20N3LFATMA1
Manufacturer:
Package:
PG-TO263-3
Datasheet:
-
Description:
MOSFET N-CH 200V 88A TO263-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$5.800326
$5.800326
10
$5.220293
$52.20293
50
$4.640261
$232.01305
100
$4.060228
$406.0228
500
$3.944222
$1972.111
1000
$3.866884
$3866.884
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 100 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 11mOhm @ 88A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4.2V @ 260µA |
Supplier Device Package | PG-TO263-3 |
Drain to Source Voltage (Vdss) | 200 V |
Power Dissipation (Max) | 250W (Tc) |
Series | OptiMOS™ 3 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 88A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPB110 |