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IPB120N04S401ATMA1
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IPB120N04S401ATMA1

Infineon Technologies

Product No:

IPB120N04S401ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Datasheet:

-

Description:

MOSFET N-CH 40V 120A D2PAK

Quantity:

Delivery:

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In Stock : 1106

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.846057

    $1.846057

  • 10

    $1.661452

    $16.61452

  • 50

    $1.476846

    $73.8423

  • 100

    $1.29224

    $129.224

  • 500

    $1.255319

    $627.6595

  • 1000

    $1.230705

    $1230.705

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 14000 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 176 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.5mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 140µA
Supplier Device Package PG-TO263-3
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 188W (Tc)
Series OptiMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPB120