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IPB120N06S402ATMA2
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IPB120N06S402ATMA2

Infineon Technologies

Product No:

IPB120N06S402ATMA2

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Datasheet:

-

Description:

MOSFET N-CH 60V 120A TO263-3

Quantity:

Delivery:

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In Stock : 796

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.149087

    $2.149087

  • 10

    $1.934179

    $19.34179

  • 50

    $1.71927

    $85.9635

  • 100

    $1.504361

    $150.4361

  • 500

    $1.46138

    $730.69

  • 1000

    $1.432725

    $1432.725

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 15750 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 195 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.8mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 140µA
Supplier Device Package PG-TO263-3-2
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 188W (Tc)
Series Automotive, AEC-Q101, OptiMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPB120