Infineon Technologies
Product No:
IPB120N06S402ATMA2
Manufacturer:
Package:
PG-TO263-3-2
Datasheet:
-
Description:
MOSFET N-CH 60V 120A TO263-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.149087
$2.149087
10
$1.934179
$19.34179
50
$1.71927
$85.9635
100
$1.504361
$150.4361
500
$1.46138
$730.69
1000
$1.432725
$1432.725
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Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 15750 pF @ 25 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 2.8mOhm @ 100A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4V @ 140µA |
Supplier Device Package | PG-TO263-3-2 |
Drain to Source Voltage (Vdss) | 60 V |
Power Dissipation (Max) | 188W (Tc) |
Series | Automotive, AEC-Q101, OptiMOS™ |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPB120 |