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IPB120N08S404ATMA1
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IPB120N08S404ATMA1

Infineon Technologies

Product No:

IPB120N08S404ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Datasheet:

-

Description:

MOSFET N-CH 80V 120A D2PAK

Quantity:

Delivery:

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Payment:

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In Stock : 723

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.788695

    $2.788695

  • 10

    $2.509826

    $25.09826

  • 50

    $2.230956

    $111.5478

  • 100

    $1.952087

    $195.2087

  • 500

    $1.896313

    $948.1565

  • 1000

    $1.85913

    $1859.13

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 6450 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 4.1mOhm @ 100A, 10V
Product Status Last Time Buy
Vgs(th) (Max) @ Id 4V @ 120µA
Supplier Device Package PG-TO263-3
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 179W (Tc)
Series Automotive, AEC-Q101, OptiMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPB120