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IPB120P04P4L03ATMA2
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IPB120P04P4L03ATMA2

Infineon Technologies

Product No:

IPB120P04P4L03ATMA2

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Datasheet:

-

Description:

MOSFET P-CH 40V 120A TO263-3

Quantity:

Delivery:

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Payment:

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In Stock : 2860

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.980878

    $1.980878

  • 10

    $1.78279

    $17.8279

  • 50

    $1.584702

    $79.2351

  • 100

    $1.386614

    $138.6614

  • 500

    $1.346997

    $673.4985

  • 1000

    $1.320585

    $1320.585

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 15000 pF @ 25 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 234 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.4mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 340µA
Supplier Device Package PG-TO263-3-2
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 136W (Tc)
Series OptiMOS®-P2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Mfr Infineon Technologies
Vgs (Max) +5V, -16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IPB120