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IPB17N25S3100ATMA1
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IPB17N25S3100ATMA1

Infineon Technologies

Product No:

IPB17N25S3100ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Datasheet:

-

Description:

MOSFET N-CH 250V 17A TO263-3

Quantity:

Delivery:

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Payment:

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In Stock : 3656

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.494675

    $1.494675

  • 10

    $1.345207

    $13.45207

  • 50

    $1.19574

    $59.787

  • 100

    $1.046272

    $104.6272

  • 500

    $1.016379

    $508.1895

  • 1000

    $0.99645

    $996.45

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 100mOhm @ 17A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 54µA
Supplier Device Package PG-TO263-3-2
Drain to Source Voltage (Vdss) 250 V
Power Dissipation (Max) 107W (Tc)
Series Automotive, AEC-Q101, OptiMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPB17N25