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IPB180N06S4H1ATMA2
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IPB180N06S4H1ATMA2

Infineon Technologies

Product No:

IPB180N06S4H1ATMA2

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7

Datasheet:

-

Description:

MOSFET N-CH 60V 180A TO263-7

Quantity:

Delivery:

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Payment:

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In Stock : 4977

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.58615

    $2.58615

  • 10

    $2.327535

    $23.27535

  • 50

    $2.06892

    $103.446

  • 100

    $1.810305

    $181.0305

  • 500

    $1.758582

    $879.291

  • 1000

    $1.7241

    $1724.1

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 21900 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 270 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 200µA
Supplier Device Package PG-TO263-7
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 250W (Tc)
Series Automotive, AEC-Q101, OptiMOS™
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPB180