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IPB180N10S402ATMA1
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IPB180N10S402ATMA1

Infineon Technologies

Product No:

IPB180N10S402ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7-3

Datasheet:

-

Description:

MOSFET N-CH 100V 180A TO263-7

Quantity:

Delivery:

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Payment:

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In Stock : 754

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.835913

    $3.835913

  • 10

    $3.452321

    $34.52321

  • 50

    $3.06873

    $153.4365

  • 100

    $2.685139

    $268.5139

  • 500

    $2.60842

    $1304.21

  • 1000

    $2.557275

    $2557.275

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 14600 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.5mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 275µA
Supplier Device Package PG-TO263-7-3
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 300W (Tc)
Series Automotive, AEC-Q101, OptiMOS™
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPB180