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IPB180P04P4L02ATMA1
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IPB180P04P4L02ATMA1

Infineon Technologies

Product No:

IPB180P04P4L02ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7-3

Datasheet:

pdf

Description:

MOSFET P-CH 40V 180A TO263-7

Quantity:

Delivery:

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Payment:

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In Stock : 66

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.333362

    $2.333362

  • 10

    $2.100026

    $21.00026

  • 50

    $1.86669

    $93.3345

  • 100

    $1.633354

    $163.3354

  • 500

    $1.586687

    $793.3435

  • 1000

    $1.555575

    $1555.575

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 18700 pF @ 25 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 286 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V
Product Status Not For New Designs
Vgs(th) (Max) @ Id 2.2V @ 410µA
Supplier Device Package PG-TO263-7-3
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 150W (Tc)
Series OptiMOS™
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IPB180