Infineon Technologies
Product No:
IPB19DP10NMATMA1
Manufacturer:
Package:
PG-TO263-3
Datasheet:
-
Description:
TRENCH >=100V PG-TO263-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.069295
$1.069295
10
$0.962365
$9.62365
50
$0.855436
$42.7718
100
$0.748506
$74.8506
500
$0.72712
$363.56
1000
$0.712863
$712.863
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Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 50 V |
FET Type | P-Channel |
Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 185mOhm @ 12A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4V @ 1.04mA |
Supplier Device Package | PG-TO263-3 |
Drain to Source Voltage (Vdss) | 100 V |
Power Dissipation (Max) | 3.8W (Ta), 83W (Tc) |
Series | OptiMOS™ |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta), 13.8A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPB19D |