IPB45N04S4L-08
detaildesc

IPB45N04S4L-08

Infineon Technologies

Product No:

IPB45N04S4L-08

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 1678

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.67725

    $0.67725

  • 10

    $0.609525

    $6.09525

  • 50

    $0.5418

    $27.09

  • 100

    $0.474075

    $47.4075

  • 500

    $0.46053

    $230.265

  • 1000

    $0.4515

    $451.5

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2340 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 7.9mOhm @ 45A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 17µA
Supplier Device Package PG-TO263-3-2
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 45W (Tc)
Series OptiMOS™T2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Mfr Infineon Technologies
Vgs (Max) +20V, -16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk