Infineon Technologies
Product No:
IPB45N06S4L08ATMA3
Manufacturer:
Package:
PG-TO263-3-2
Datasheet:
-
Description:
MOSFET N-CH 60V 45A TO263-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.928148
$0.928148
10
$0.835333
$8.35333
50
$0.742518
$37.1259
100
$0.649703
$64.9703
500
$0.63114
$315.57
1000
$0.618765
$618.765
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Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 4780 pF @ 25 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 7.9mOhm @ 45A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.2V @ 35µA |
Supplier Device Package | PG-TO263-3-2 |
Drain to Source Voltage (Vdss) | 60 V |
Power Dissipation (Max) | 71W (Tc) |
Series | OptiMOS®-T2 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±16V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPB45N |