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IPB45N06S4L08ATMA3
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IPB45N06S4L08ATMA3

Infineon Technologies

Product No:

IPB45N06S4L08ATMA3

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Datasheet:

-

Description:

MOSFET N-CH 60V 45A TO263-3

Quantity:

Delivery:

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In Stock : 2062

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.928148

    $0.928148

  • 10

    $0.835333

    $8.35333

  • 50

    $0.742518

    $37.1259

  • 100

    $0.649703

    $64.9703

  • 500

    $0.63114

    $315.57

  • 1000

    $0.618765

    $618.765

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4780 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 7.9mOhm @ 45A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 35µA
Supplier Device Package PG-TO263-3-2
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 71W (Tc)
Series OptiMOS®-T2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IPB45N