IPB60R080P7ATMA1

Infineon Technologies

Product No:

IPB60R080P7ATMA1

Manufacturer:

Package:

PG-TO263-3

Datasheet:

Description:

MOSFET N-CH 600V 37A D2PAK

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2180 pF @ 400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	51 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	80mOhm @ 11.8A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 590µA
Supplier Device Package	PG-TO263-3
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	129W (Tc)
Series	CoolMOS™ P7
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	37A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPB60R080