IPB60R099C6ATMA1
detaildesc

IPB60R099C6ATMA1

Infineon Technologies

Product No:

IPB60R099C6ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Datasheet:

-

Description:

MOSFET N-CH 600V 37.9A D2PAK

Quantity:

Delivery:

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Payment:

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In Stock : 153

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $10.63125

    $10.63125

  • 10

    $9.568125

    $95.68125

  • 50

    $8.505

    $425.25

  • 100

    $7.441875

    $744.1875

  • 500

    $7.22925

    $3614.625

  • 1000

    $7.0875

    $7087.5

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2660 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 119 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 99mOhm @ 18.1A, 10V
Product Status Not For New Designs
Vgs(th) (Max) @ Id 3.5V @ 1.21mA
Supplier Device Package PG-TO263-3
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 278W (Tc)
Series CoolMOS™ C6
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 37.9A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPB60R099