IPB60R099C7ATMA1
detaildesc

IPB60R099C7ATMA1

Infineon Technologies

Product No:

IPB60R099C7ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Datasheet:

-

Description:

MOSFET N-CH 600V 22A TO263-3

Quantity:

Delivery:

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Payment:

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In Stock : 618

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.402157

    $3.402157

  • 10

    $3.061942

    $30.61942

  • 50

    $2.721726

    $136.0863

  • 100

    $2.38151

    $238.151

  • 500

    $2.313467

    $1156.7335

  • 1000

    $2.268105

    $2268.105

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1819 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 99mOhm @ 9.7A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 490µA
Supplier Device Package PG-TO263-3-2
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 110W (Tc)
Series CoolMOS™ C7
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPB60R099