IPB60R099P7ATMA1
detaildesc

IPB60R099P7ATMA1

Infineon Technologies

Product No:

IPB60R099P7ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Datasheet:

-

Description:

MOSFET N-CH 600V 31A D2PAK

Quantity:

Delivery:

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Payment:

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In Stock : 10000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.287838

    $2.287838

  • 10

    $2.059054

    $20.59054

  • 50

    $1.83027

    $91.5135

  • 100

    $1.601486

    $160.1486

  • 500

    $1.555729

    $777.8645

  • 1000

    $1.525225

    $1525.225

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1952 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 99mOhm @ 10.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 530µA
Supplier Device Package PG-TO263-3
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 117W (Tc)
Series CoolMOS™ P7
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 31A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPB60R099