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IPB60R105CFD7ATMA1
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IPB60R105CFD7ATMA1

Infineon Technologies

Product No:

IPB60R105CFD7ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Datasheet:

-

Description:

MOSFET N-CH 600V 21A TO263-3

Quantity:

Delivery:

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Payment:

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In Stock : 435

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.907923

    $2.907923

  • 10

    $2.61713

    $26.1713

  • 50

    $2.326338

    $116.3169

  • 100

    $2.035546

    $203.5546

  • 500

    $1.977387

    $988.6935

  • 1000

    $1.938615

    $1938.615

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1752 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 105mOhm @ 9.3A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 470µA
Supplier Device Package PG-TO263-3-2
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 106W (Tc)
Series CoolMOS™ CFD7
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPB60R105