Infineon Technologies
Product No:
IPB60R120P7ATMA1
Manufacturer:
Package:
PG-TO263-3
Datasheet:
-
Description:
MOSFET N-CH 600V 26A D2PAK
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.086088
$2.086088
10
$1.877479
$18.77479
50
$1.66887
$83.4435
100
$1.460261
$146.0261
500
$1.41854
$709.27
1000
$1.390725
$1390.725
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 1544 pF @ 400 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 120mOhm @ 8.2A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4V @ 410µA |
Supplier Device Package | PG-TO263-3 |
Drain to Source Voltage (Vdss) | 600 V |
Power Dissipation (Max) | 95W (Tc) |
Series | CoolMOS™ P7 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPB60R120 |