Infineon Technologies
Product No:
IPB60R165CPATMA1
Manufacturer:
Package:
PG-TO263-3-2
Datasheet:
-
Description:
MOSFET N-CH 600V 21A TO263-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.841615
$2.841615
10
$2.557453
$25.57453
50
$2.273292
$113.6646
100
$1.98913
$198.913
500
$1.932298
$966.149
1000
$1.89441
$1894.41
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 100 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 165mOhm @ 12A, 10V |
Product Status | Not For New Designs |
Vgs(th) (Max) @ Id | 3.5V @ 790µA |
Supplier Device Package | PG-TO263-3-2 |
Drain to Source Voltage (Vdss) | 600 V |
Power Dissipation (Max) | 192W (Tc) |
Series | CoolMOS™ CP |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPB60R165 |