IPB60R190C6ATMA1
detaildesc

IPB60R190C6ATMA1

Infineon Technologies

Product No:

IPB60R190C6ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Datasheet:

-

Description:

MOSFET N-CH 600V 20.2A D2PAK

Quantity:

Delivery:

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Payment:

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In Stock : 4428

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.114595

    $2.114595

  • 10

    $1.903136

    $19.03136

  • 50

    $1.691676

    $84.5838

  • 100

    $1.480217

    $148.0217

  • 500

    $1.437925

    $718.9625

  • 1000

    $1.40973

    $1409.73

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 190mOhm @ 9.5A, 10V
Product Status Not For New Designs
Vgs(th) (Max) @ Id 3.5V @ 630µA
Supplier Device Package PG-TO263-3
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 151W (Tc)
Series CoolMOS™ C6
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPB60R190