IPB60R199CPATMA1
detaildesc

IPB60R199CPATMA1

Infineon Technologies

Product No:

IPB60R199CPATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Datasheet:

-

Description:

MOSFET N-CH 600V 16A TO263-3

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 3531

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.43495

    $2.43495

  • 10

    $2.191455

    $21.91455

  • 50

    $1.94796

    $97.398

  • 100

    $1.704465

    $170.4465

  • 500

    $1.655766

    $827.883

  • 1000

    $1.6233

    $1623.3

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1520 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 199mOhm @ 9.9A, 10V
Product Status Not For New Designs
Vgs(th) (Max) @ Id 3.5V @ 660µA
Supplier Device Package PG-TO263-3-2
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 139W (Tc)
Series CoolMOS™ CP
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPB60R199