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IPB60R210CFD7ATMA1
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IPB60R210CFD7ATMA1

Infineon Technologies

Product No:

IPB60R210CFD7ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Datasheet:

-

Description:

MOSFET N-CH 600V 12A TO263-3

Quantity:

Delivery:

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In Stock : 759

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.643198

    $1.643198

  • 10

    $1.478878

    $14.78878

  • 50

    $1.314558

    $65.7279

  • 100

    $1.150238

    $115.0238

  • 500

    $1.117374

    $558.687

  • 1000

    $1.095465

    $1095.465

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1015 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 210mOhm @ 4.9A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 250µA
Supplier Device Package PG-TO263-3-2
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 64W (Tc)
Series CoolMOS™ CFD7
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPB60R210