IPB60R250CP
detaildesc

IPB60R250CP

Infineon Technologies

Product No:

IPB60R250CP

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 21134

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.34675

    $2.34675

  • 10

    $2.112075

    $21.12075

  • 50

    $1.8774

    $93.87

  • 100

    $1.642725

    $164.2725

  • 500

    $1.59579

    $797.895

  • 1000

    $1.5645

    $1564.5

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 250mOhm @ 7.8A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 520µA
Supplier Device Package PG-TO263-3-2
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 104W (Tc)
Series CoolMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk