Infineon Technologies
Product No:
IPB65R041CFD7ATMA1
Manufacturer:
Package:
PG-TO263-3
Datasheet:
-
Description:
HIGH POWER_NEW
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$6.656895
$6.656895
10
$5.991206
$59.91206
50
$5.325516
$266.2758
100
$4.659827
$465.9827
500
$4.526689
$2263.3445
1000
$4.43793
$4437.93
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 4975 pF @ 400 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 102 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 41mOhm @ 24.8A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4.5V @ 1.24mA |
Supplier Device Package | PG-TO263-3 |
Drain to Source Voltage (Vdss) | 650 V |
Power Dissipation (Max) | 227W (Tc) |
Series | CoolMOS™ CFD7 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPB65R |