IPB65R065C7ATMA2
detaildesc

IPB65R065C7ATMA2

Infineon Technologies

Product No:

IPB65R065C7ATMA2

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Datasheet:

-

Description:

MOSFET N-CH 650V 33A TO263-3

Quantity:

Delivery:

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Payment:

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In Stock : 2195

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $5.315467

    $5.315467

  • 10

    $4.783921

    $47.83921

  • 50

    $4.252374

    $212.6187

  • 100

    $3.720827

    $372.0827

  • 500

    $3.614518

    $1807.259

  • 1000

    $3.543645

    $3543.645

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3020 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 65mOhm @ 17.1A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 200µA
Supplier Device Package PG-TO263-3
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 171W (Tc)
Series CoolMOS™ C7
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPB65R065