
Infineon Technologies
Product No:
IPB65R090CFD7ATMA1
Manufacturer:
Package:
PG-TO263-3
Datasheet:
-
Description:
HIGH POWER_NEW
Quantity:
Delivery:

Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$3.520598
$3.520598
10
$3.168538
$31.68538
50
$2.816478
$140.8239
100
$2.464418
$246.4418
500
$2.394006
$1197.003
1000
$2.347065
$2347.065
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| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2513 pF @ 400 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 12.5A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.5V @ 630µA |
| Supplier Device Package | PG-TO263-3 |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | 127W (Tc) |
| Series | CoolMOS™ CFD7 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | IPB65R |