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IPB65R090CFD7ATMA1
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IPB65R090CFD7ATMA1

Infineon Technologies

Product No:

IPB65R090CFD7ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Datasheet:

-

Description:

HIGH POWER_NEW

Quantity:

Delivery:

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Payment:

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In Stock : 915

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.520598

    $3.520598

  • 10

    $3.168538

    $31.68538

  • 50

    $2.816478

    $140.8239

  • 100

    $2.464418

    $246.4418

  • 500

    $2.394006

    $1197.003

  • 1000

    $2.347065

    $2347.065

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2513 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 90mOhm @ 12.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 630µA
Supplier Device Package PG-TO263-3
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 127W (Tc)
Series CoolMOS™ CFD7
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPB65R