Infineon Technologies
Product No:
IPB65R095C7ATMA2
Manufacturer:
Package:
PG-TO263-3
Datasheet:
-
Description:
MOSFET N-CH 650V 24A TO263-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$3.616672
$3.616672
10
$3.255005
$32.55005
50
$2.893338
$144.6669
100
$2.531671
$253.1671
500
$2.459337
$1229.6685
1000
$2.411115
$2411.115
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 2140 pF @ 400 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 95mOhm @ 11.8A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4V @ 590µA |
Supplier Device Package | PG-TO263-3 |
Drain to Source Voltage (Vdss) | 650 V |
Power Dissipation (Max) | 128W (Tc) |
Series | CoolMOS™ C7 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPB65R095 |