IPB65R095C7ATMA2
detaildesc

IPB65R095C7ATMA2

Infineon Technologies

Product No:

IPB65R095C7ATMA2

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Datasheet:

-

Description:

MOSFET N-CH 650V 24A TO263-3

Quantity:

Delivery:

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Payment:

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In Stock : 1272

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.616672

    $3.616672

  • 10

    $3.255005

    $32.55005

  • 50

    $2.893338

    $144.6669

  • 100

    $2.531671

    $253.1671

  • 500

    $2.459337

    $1229.6685

  • 1000

    $2.411115

    $2411.115

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2140 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 95mOhm @ 11.8A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 590µA
Supplier Device Package PG-TO263-3
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 128W (Tc)
Series CoolMOS™ C7
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPB65R095