Infineon Technologies
Product No:
IPB65R110CFDATMA2
Manufacturer:
Package:
PG-TO263-3
Datasheet:
-
Description:
MOSFET N-CH 650V 31.2A TO263-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$4.024125
$4.024125
10
$3.621713
$36.21713
50
$3.2193
$160.965
100
$2.816887
$281.6887
500
$2.736405
$1368.2025
1000
$2.68275
$2682.75
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 3240 pF @ 100 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 118 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 110mOhm @ 12.7A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4.5V @ 1.3mA |
Supplier Device Package | PG-TO263-3 |
Drain to Source Voltage (Vdss) | 650 V |
Power Dissipation (Max) | 277.8W (Tc) |
Series | CoolMOS™ CFD2 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 31.2A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPB65R110 |