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IPB65R190CFD7AATMA1
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IPB65R190CFD7AATMA1

Infineon Technologies

Product No:

IPB65R190CFD7AATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Datasheet:

-

Description:

MOSFET N-CH 650V 14A TO263-3

Quantity:

Delivery:

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Payment:

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In Stock : 518

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.162002

    $2.162002

  • 10

    $1.945802

    $19.45802

  • 50

    $1.729602

    $86.4801

  • 100

    $1.513402

    $151.3402

  • 500

    $1.470162

    $735.081

  • 1000

    $1.441335

    $1441.335

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1291 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 190mOhm @ 6.4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 320µA
Supplier Device Package PG-TO263-3
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 77W (Tc)
Series Automotive, AEC-Q101, CoolMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Package Tape & Reel (TR)
Base Product Number IPB65R190