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IPB65R190CFDAATMA1
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IPB65R190CFDAATMA1

Infineon Technologies

Product No:

IPB65R190CFDAATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Datasheet:

-

Description:

MOSFET N-CH 650V 17.5A D2PAK

Quantity:

Delivery:

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In Stock : 1014

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.563627

    $2.563627

  • 10

    $2.307265

    $23.07265

  • 50

    $2.050902

    $102.5451

  • 100

    $1.794539

    $179.4539

  • 500

    $1.743267

    $871.6335

  • 1000

    $1.709085

    $1709.085

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1850 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 190mOhm @ 7.3A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 700µA
Supplier Device Package PG-TO263-3
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 151W (Tc)
Series Automotive, AEC-Q101, CoolMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 17.5A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPB65R190