Infineon Technologies
Product No:
IPB65R190CFDAATMA1
Manufacturer:
Package:
PG-TO263-3
Datasheet:
-
Description:
MOSFET N-CH 650V 17.5A D2PAK
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.563627
$2.563627
10
$2.307265
$23.07265
50
$2.050902
$102.5451
100
$1.794539
$179.4539
500
$1.743267
$871.6335
1000
$1.709085
$1709.085
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Operating Temperature | -40°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 1850 pF @ 100 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 190mOhm @ 7.3A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4.5V @ 700µA |
Supplier Device Package | PG-TO263-3 |
Drain to Source Voltage (Vdss) | 650 V |
Power Dissipation (Max) | 151W (Tc) |
Series | Automotive, AEC-Q101, CoolMOS™ |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 17.5A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPB65R190 |