Infineon Technologies
Product No:
IPB65R310CFDAATMA1
Manufacturer:
Package:
PG-TO263-3
Datasheet:
-
Description:
MOSFET N-CH 650V 11.4A D2PAK
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.697535
$1.697535
10
$1.527781
$15.27781
50
$1.358028
$67.9014
100
$1.188274
$118.8274
500
$1.154324
$577.162
1000
$1.13169
$1131.69
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Operating Temperature | -40°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 100 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 310mOhm @ 4.4A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4.5V @ 440µA |
Supplier Device Package | PG-TO263-3 |
Drain to Source Voltage (Vdss) | 650 V |
Power Dissipation (Max) | 104.2W (Tc) |
Series | Automotive, AEC-Q101, CoolMOS™ |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 11.4A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPB65R310 |