Infineon Technologies
Product No:
IPB70N10S312ATMA1
Manufacturer:
Package:
PG-TO263-3-2
Datasheet:
-
Description:
MOSFET N-CH 100V 70A TO263-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.91709
$1.91709
10
$1.725381
$17.25381
50
$1.533672
$76.6836
100
$1.341963
$134.1963
500
$1.303621
$651.8105
1000
$1.27806
$1278.06
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 4355 pF @ 25 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 11.3mOhm @ 70A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4V @ 83µA |
Supplier Device Package | PG-TO263-3-2 |
Drain to Source Voltage (Vdss) | 100 V |
Power Dissipation (Max) | 125W (Tc) |
Series | OptiMOS™ |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPB70N10 |