IPB70N10S312ATMA1
detaildesc

IPB70N10S312ATMA1

Infineon Technologies

Product No:

IPB70N10S312ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Datasheet:

-

Description:

MOSFET N-CH 100V 70A TO263-3

Quantity:

Delivery:

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Payment:

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In Stock : 602

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.91709

    $1.91709

  • 10

    $1.725381

    $17.25381

  • 50

    $1.533672

    $76.6836

  • 100

    $1.341963

    $134.1963

  • 500

    $1.303621

    $651.8105

  • 1000

    $1.27806

    $1278.06

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4355 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 11.3mOhm @ 70A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 83µA
Supplier Device Package PG-TO263-3-2
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 125W (Tc)
Series OptiMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPB70N10