IPB80N04S2H4ATMA2
detaildesc

IPB80N04S2H4ATMA2

Infineon Technologies

Product No:

IPB80N04S2H4ATMA2

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Datasheet:

pdf

Description:

MOSFET N-CHANNEL_30/40V

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 457

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.040885

    $2.040885

  • 10

    $1.836796

    $18.36796

  • 50

    $1.632708

    $81.6354

  • 100

    $1.428619

    $142.8619

  • 500

    $1.387802

    $693.901

  • 1000

    $1.36059

    $1360.59

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 148 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.7mOhm @ 80A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package PG-TO263-3-2
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 300W (Tc)
Series CoolMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPB80N