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IPB80N06S2L06ATMA2
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IPB80N06S2L06ATMA2

Infineon Technologies

Product No:

IPB80N06S2L06ATMA2

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Datasheet:

pdf

Description:

MOSFET N-CH 55V 80A TO263-3

Quantity:

Delivery:

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Payment:

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In Stock : 588

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.043877

    $2.043877

  • 10

    $1.83949

    $18.3949

  • 50

    $1.635102

    $81.7551

  • 100

    $1.430714

    $143.0714

  • 500

    $1.389837

    $694.9185

  • 1000

    $1.362585

    $1362.585

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3800 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6mOhm @ 69A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 180µA
Supplier Device Package PG-TO263-3-2
Drain to Source Voltage (Vdss) 55 V
Power Dissipation (Max) 250W (Tc)
Series OptiMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IPB80N