Infineon Technologies
Product No:
IPB80N06S2L11ATMA2
Manufacturer:
Package:
PG-TO263-3-2
Datasheet:
-
Description:
MOSFET N-CH 55V 80A TO263-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.3797
$1.3797
10
$1.24173
$12.4173
50
$1.10376
$55.188
100
$0.96579
$96.579
500
$0.938196
$469.098
1000
$0.9198
$919.8
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Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 2075 pF @ 25 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 10.7mOhm @ 40A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 2V @ 93µA |
Supplier Device Package | PG-TO263-3-2 |
Drain to Source Voltage (Vdss) | 55 V |
Power Dissipation (Max) | 158W (Tc) |
Series | OptiMOS™ |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPB80N |