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IPB80N06S2L11ATMA2
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IPB80N06S2L11ATMA2

Infineon Technologies

Product No:

IPB80N06S2L11ATMA2

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Datasheet:

-

Description:

MOSFET N-CH 55V 80A TO263-3

Quantity:

Delivery:

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Payment:

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In Stock : 683

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.3797

    $1.3797

  • 10

    $1.24173

    $12.4173

  • 50

    $1.10376

    $55.188

  • 100

    $0.96579

    $96.579

  • 500

    $0.938196

    $469.098

  • 1000

    $0.9198

    $919.8

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2075 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 10.7mOhm @ 40A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 93µA
Supplier Device Package PG-TO263-3-2
Drain to Source Voltage (Vdss) 55 V
Power Dissipation (Max) 158W (Tc)
Series OptiMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IPB80N