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IPB80N08S2L07ATMA1
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IPB80N08S2L07ATMA1

Infineon Technologies

Product No:

IPB80N08S2L07ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Datasheet:

-

Description:

MOSFET N-CH 75V 80A TO263-3

Quantity:

Delivery:

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Payment:

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In Stock : 38

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.462638

    $3.462638

  • 10

    $3.116374

    $31.16374

  • 50

    $2.77011

    $138.5055

  • 100

    $2.423846

    $242.3846

  • 500

    $2.354594

    $1177.297

  • 1000

    $2.308425

    $2308.425

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5400 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 233 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6.8mOhm @ 80A, 10V
Product Status Last Time Buy
Vgs(th) (Max) @ Id 2V @ 250µA
Supplier Device Package PG-TO263-3-2
Drain to Source Voltage (Vdss) 75 V
Power Dissipation (Max) 300W (Tc)
Series OptiMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IPB80N