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IPB80P04P4L08ATMA2
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IPB80P04P4L08ATMA2

Infineon Technologies

Product No:

IPB80P04P4L08ATMA2

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Datasheet:

pdf

Description:

MOSFET P-CH 40V 80A TO263-3

Quantity:

Delivery:

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Payment:

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In Stock : 1063

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.151482

    $1.151482

  • 10

    $1.036334

    $10.36334

  • 50

    $0.921186

    $46.0593

  • 100

    $0.806038

    $80.6038

  • 500

    $0.783008

    $391.504

  • 1000

    $0.767655

    $767.655

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5430 pF @ 25 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 8.2mOhm @ 80A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 120µA
Supplier Device Package PG-TO263-3-2
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 75W (Tc)
Series OptiMOS®-P2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Mfr Infineon Technologies
Vgs (Max) +5V, -16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IPB80P