IPB80R290C3AATMA2
detaildesc

IPB80R290C3AATMA2

Infineon Technologies

Product No:

IPB80R290C3AATMA2

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Datasheet:

-

Description:

MOSFET N-CH 800V 17A TO263-3

Quantity:

Delivery:

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Payment:

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In Stock : 5606

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $4.09311

    $4.09311

  • 10

    $3.683799

    $36.83799

  • 50

    $3.274488

    $163.7244

  • 100

    $2.865177

    $286.5177

  • 500

    $2.783315

    $1391.6575

  • 1000

    $2.72874

    $2728.74

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2300 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 117 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 290mOhm @ 11A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.9V @ 1mA
Supplier Device Package PG-TO263-3-2
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 227W (Tc)
Series Automotive, AEC-Q101, CoolMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPB80R