Infineon Technologies
Product No:
IPB95R130PFD7ATMA1
Manufacturer:
Package:
PG-TO263-3-2
Datasheet:
-
Description:
HIGH POWER_NEW
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$4.998578
$4.998578
10
$4.49872
$44.9872
50
$3.998862
$199.9431
100
$3.499004
$349.9004
500
$3.399033
$1699.5165
1000
$3.332385
$3332.385
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 4170 pF @ 400 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 141 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 130mOhm @ 25.1A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 3.5V @ 1.25mA |
Supplier Device Package | PG-TO263-3-2 |
Drain to Source Voltage (Vdss) | 950 V |
Power Dissipation (Max) | 227W (Tc) |
Series | CoolMOS™ |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 36.5A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |