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IPB95R130PFD7ATMA1
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IPB95R130PFD7ATMA1

Infineon Technologies

Product No:

IPB95R130PFD7ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Datasheet:

-

Description:

HIGH POWER_NEW

Quantity:

Delivery:

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In Stock : 866

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $4.998578

    $4.998578

  • 10

    $4.49872

    $44.9872

  • 50

    $3.998862

    $199.9431

  • 100

    $3.499004

    $349.9004

  • 500

    $3.399033

    $1699.5165

  • 1000

    $3.332385

    $3332.385

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4170 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 141 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 130mOhm @ 25.1A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 1.25mA
Supplier Device Package PG-TO263-3-2
Drain to Source Voltage (Vdss) 950 V
Power Dissipation (Max) 227W (Tc)
Series CoolMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 36.5A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)