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IPB95R310PFD7ATMA1
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IPB95R310PFD7ATMA1

Infineon Technologies

Product No:

IPB95R310PFD7ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Datasheet:

-

Description:

LOW POWER_NEW

Quantity:

Delivery:

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In Stock : 1227

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.534333

    $2.534333

  • 10

    $2.280899

    $22.80899

  • 50

    $2.027466

    $101.3733

  • 100

    $1.774033

    $177.4033

  • 500

    $1.723346

    $861.673

  • 1000

    $1.689555

    $1689.555

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1765 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 310mOhm @ 10.4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 520µA
Supplier Device Package PG-TO263-3-2
Drain to Source Voltage (Vdss) 950 V
Power Dissipation (Max) 125W (Tc)
Series CoolMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 17.5A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)