Infineon Technologies
Product No:
IPB95R450PFD7ATMA1
Manufacturer:
Package:
PG-TO263-3-2
Datasheet:
-
Description:
MOSFET N-CH 950V 13.3A TO263-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.904648
$1.904648
10
$1.714183
$17.14183
50
$1.523718
$76.1859
100
$1.333253
$133.3253
500
$1.29516
$647.58
1000
$1.269765
$1269.765
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 1230 pF @ 400 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 450mOhm @ 7.2A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 3.5V @ 360µA |
Supplier Device Package | PG-TO263-3-2 |
Drain to Source Voltage (Vdss) | 950 V |
Power Dissipation (Max) | 104W (Tc) |
Series | CoolMOS™ |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 13.3A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |