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IPBE65R099CFD7AATMA1
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IPBE65R099CFD7AATMA1

Infineon Technologies

Product No:

IPBE65R099CFD7AATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7-3-10

Datasheet:

-

Description:

MOSFET N-CH 650V 24A TO263-7

Quantity:

Delivery:

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Payment:

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In Stock : 324

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.997665

    $3.997665

  • 10

    $3.597898

    $35.97898

  • 50

    $3.198132

    $159.9066

  • 100

    $2.798366

    $279.8366

  • 500

    $2.718412

    $1359.206

  • 1000

    $2.66511

    $2665.11

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2513 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 99mOhm @ 12.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 630µA
Supplier Device Package PG-TO263-7-3-10
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 127W (Tc)
Series Automotive, AEC-Q101, CoolMOS™ CFD7A
Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPBE65