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IPBE65R115CFD7AATMA1
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IPBE65R115CFD7AATMA1

Infineon Technologies

Product No:

IPBE65R115CFD7AATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7-11

Datasheet:

-

Description:

AUTOMOTIVE_COOLMOS PG-TO263-7

Quantity:

Delivery:

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In Stock : 802

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.354435

    $3.354435

  • 10

    $3.018992

    $30.18992

  • 50

    $2.683548

    $134.1774

  • 100

    $2.348104

    $234.8104

  • 500

    $2.281016

    $1140.508

  • 1000

    $2.23629

    $2236.29

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1950 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 115mOhm @ 9.7A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 490µA
Supplier Device Package PG-TO263-7-11
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 114W (Tc)
Series CoolMOS™
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPBE65R