Infineon Technologies
Product No:
IPD048N06L3GATMA1
Manufacturer:
Package:
PG-TO252-3-311
Datasheet:
-
Description:
MOSFET N-CH 60V 90A TO252-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.751275
$0.751275
10
$0.676148
$6.76148
50
$0.60102
$30.051
100
$0.525892
$52.5892
500
$0.510867
$255.4335
1000
$0.50085
$500.85
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Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 8400 pF @ 30 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 4.8mOhm @ 90A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.2V @ 58µA |
Supplier Device Package | PG-TO252-3-311 |
Drain to Source Voltage (Vdss) | 60 V |
Power Dissipation (Max) | 115W (Tc) |
Series | OptiMOS™ |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPD048N |