IPD050N10N5ATMA1
detaildesc

IPD050N10N5ATMA1

Infineon Technologies

Product No:

IPD050N10N5ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

Datasheet:

-

Description:

MOSFET N-CH 100V 80A TO252-3

Quantity:

Delivery:

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Payment:

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In Stock : 8766

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.367145

    $1.367145

  • 10

    $1.23043

    $12.3043

  • 50

    $1.093716

    $54.6858

  • 100

    $0.957001

    $95.7001

  • 500

    $0.929659

    $464.8295

  • 1000

    $0.91143

    $911.43

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4700 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 5mOhm @ 40A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.8V @ 84µA
Supplier Device Package PG-TO252-3
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 150W (Tc)
Series OptiMOS™
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number IPD050