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IPD055N08NF2SATMA1
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IPD055N08NF2SATMA1

Infineon Technologies

Product No:

IPD055N08NF2SATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

Datasheet:

-

Description:

MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 659

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.052258

    $1.052258

  • 10

    $0.947032

    $9.47032

  • 50

    $0.841806

    $42.0903

  • 100

    $0.73658

    $73.658

  • 500

    $0.715535

    $357.7675

  • 1000

    $0.701505

    $701.505

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 40 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 5.5mOhm @ 60A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.8V @ 55µA
Supplier Device Package PG-TO252-3
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 3W (Ta), 107W (Tc)
Series StrongIRFET™ 2
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 17A (Ta), 98A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Cut Tape (CT)